منابع مشابه
Interaction between electronic structure and strain in Bi nanolines on Si ( 001 )
Heteroepitaxial strain can be a controlling factor in the lateral dimensions of 1-D nanostructures. Bi nanolines on Si(001) have an atomic structure which involves a large sub-surface reconstruction, resulting in a strong elastic coupling to the surrounding silicon. We present variable-bias STM and first principles electronic structure calculations of the Bi nanolines, which investigates this i...
متن کاملEndotaxial silicide nanowires.
We demonstrate the growth of self-assembled nanowires of cobalt silicide on Si(111), (100), and (110) substrates during deposition of Co onto a heated Si substrate. Silicide islands form via an endotaxial mechanism, growing into the substrate along inclined Si{111} planes, which breaks the symmetry of the surface and leads to a long, thin nanowire shape. During growth, both the length and width...
متن کاملMagnetic properties of self-organized Co dimer nanolines on Si/Ag(110)
We demonstrate the kinetically controlled growth of one-dimensional Co nanomagnets with a high lateral order on a nanopatterned Ag(110) surface. First, self-organized Si nanoribbons are formed upon submonolayer condensation of Si on the anisotropic Ag(110) surface. Depending on the growth temperature, individual or regular arrays (with a pitch of 2 nm) of Si nanoribbons can be grown. Next, the ...
متن کاملIn situ observations of endotaxial growth of CoSi2 nanowires on Si(110) using ultrahigh vacuum transmission electron microscopy.
We report in situ observations of the growth of endotaxial CoSi(2) nanowires on Si(110) using an ultrahigh vacuum transmission electron microscope with a miniature electron-beam deposition system located above the pole-piece of the objective lens. Metal deposition at 750-850 °C results in formation of coherently strained silicide nanowires with a fixed length/width (L/W) aspect ratio that depen...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2011
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.84.035328